The 1990’s trend toward the miniaturization of functional devices driven by the microelectronic industry led to the development of thin film materials integrated with semiconductor substrates (Si-technology), able to use their properties in micro and nanodevices with high integration densities and low operation voltages. However, since the beginning of this century, the electronic industry is demanding cost-efficient, soft-portable and high-tech devices. This has pushed the advance of Flexible Electronics, where the thin film is deposited on cheap flexible substrates (e.g., polymers, paper or textile). These substrates would also meet technological demands difficult to tackle by semiconductor substrates, such as their compatibility with roll-to-roll processing and printing technologies, thus making real applications not possible before. The degradation temperature of flexible substrates is always below 400°C. Therefore, Flexible Electronics is calling for low-temperature thin-film fabrication methods, in addition to materials that can be processed at these temperatures. Hence, organic and amorphous metal oxide semiconductors are the most widely used materials in Flexible Electronics. However, other active layers different from semiconductors are demanded because of the need of enlarging the performance of the forthcoming flexible devices. This is an opportunity for ferroelectric oxide thin films since their intrinsic multifunctionality (e.g., ferroelectric, pyroelectric, piezoelectric, multiferroic or photoferroic) would make possible multiple operations in the flexible device. But, in general, ferroelectric oxide films have to be crystalized at temperatures that exceed by far the thermal stability of the most favorable flexible substrate (i.e., Kapton polyimide). Transference methods can be used to avoid this problem. Here, the film is first processed at high temperatures on a rigid substrate, and then transferred to the flexible substrate. However, these techniques involve complex manufacturing methods and costly equipment. It should be also taken into account that the manufacturing of flexible electronic devices not only calls for low-temperature fabrication processes but also for deposition techniques that scale easily to the large areas required in flexible devices. In this regard, solution deposition methods are the best positioned today to integrate metal oxide thin films with flexible substrates, as a large-area, low-cost, high throughput fabrication technique. This conference presents a snapshot of the challenges for the integration of ferroelectric oxide films with flexible electronics, making emphasis in the development of novel solution synthesis strategies able to achieve the reduction of the processing temperature of the ferroelectric oxide and to permit the direct integration of large-area coatings of these active films with plastic substrates.